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SFH409 - GaAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol W

Features

  • q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Available in groups q Same package as SFH 309, SFH 487.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 0.7 0.4 0.6 0.4 5.2 4.5 2.54 mm spacing 0.8 0.4 4.1 3.9 4.0 3.6 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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